Backgating in Submicrometer GaAs MESFET's Operated at High Drain Bias

IEEE Electron Device Letters

Volumn 13, Issue 7, 1992, Pages 381-383

  Harrison, Alan ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

BACKGATING; SUBMICROMETER MESFET;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026896318     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192762     Document Type: Article

References (9)

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9. J. F. Wager and A. J. McCamant, “GaAs MESFET interface considerations,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1001–1007, 1987.