The Effect of Annealing Treatment on the Distribution of Deuterium in Silicon and in Silicon/Silicon Oxide Systems

Journal of the Electrochemical Society

Volumn 139, Issue 7, 1992, Pages 2042-2046

  Park, Heungsoo ^a   Helms, C R ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEUTERIUM; DIFFUSION; DOPING (ADDITIVES); SILICA;

DEUTERIUM DISTRIBUTION; IMPLANTED DEUTERIUM; SILICON OXIDE;

SEMICONDUCTING SILICON;

EID: 0026896102     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221171     Document Type: Article

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