Post irradiation effects (PIE) in integrated circuits;Les effets postérieurs d'irradiation (EPI)dans les circuits intégrés

IEEE Transactions on Nuclear Science

Volumn 39, Issue 3, 1992, Pages 328-341

  Barnes, C E ^a   Fleetwood, D M ^b   Shaw, D C ^a   Winokur, P S ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; MOS DEVICES; RADIATION HARDENING;

POST IRRADIATION EFFECTS; TRAPPED OXIDE CHARGES;

RADIATION EFFECTS;

EID: 0026883332     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.277513     Document Type: Article

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