Development of the radiation sensitivity of PMOS dosimeters1;Développment de la sensibilité aux radiations de dosimétres PMOS

IEEE Transactions on Nuclear Science

Volumn 39, Issue 3, 1992, Pages 342-346

  Kelleher, A ^a   O'Sullivan, M ^a   Ryan, J ^a   O'Neill, B ^a   Lane, W ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETERS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MOS DEVICES;

GATE OXIDES; RADIATION SENSITIVITY;

RADIATION EFFECTS;

EID: 0026882798     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.277514     Document Type: Article

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