Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structures

Electronics Letters

Volumn 28, Issue 13, 1992, Pages 1220-1221

  Sano, D ^a   Yoneyama, M ^a   Enoki, T ^a   Tamamura, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Photodetectors; Semiconductor devices and materials

Indexed keywords

PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SOLID STATE DEVICES;

BARRIER-ENHANCEMENT LAYERS; MSM PHOTODETECTORS;

SUPERLATTICES;

EID: 0026874670     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920770     Document Type: Article

References (6)

1. Wada, O., Nobuhara, H., Hamaguchi, H., Mikawa, T., Tackeuchi, A., and Fujh, T.: ‘Very high speed GalnAs metal-semiconductor- metal photodiode incorporating an AlInAs/GalnAs graded superlattice’, Appl. Phys. Lett., 1989, 54, pp. 16–17
2. Soole, J. B. D., Schumacher, H., le Blanc, H. P., Bhat, R., and Koza, M. A.: ‘High-speed performance of OMCVD grown InAlAs/ InGaAs MSM photodetectors at 1·5 pm and 1·3µm wavelengths’, IEEE Photonics Technol. Lett., 1989, 1, pp. 250–252
3. 47As metal semiconductor-metal photodetector’, Appl. Phys. Lett., 1990, 56, pp. 1067–1068
4. Burroughes, J. H., Milshtein, M. S., Pettit, G. D., Pakdaman, N., Heinrich, H., and Woodall, J. M.: ‘The frequency behavior of InGaAs/AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applications’, IEEE Photonics Technol. Lett., 1992, 4, pp. 163–166
5. Sano, E.: ‘Theoretical analysis of the influences of barrierenhancement layers on transient responses of MSM photodetectors’, to be published in IEEE Trans. 1992, ED-39, (6)
6. Sano, E.: ‘A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation’, IEEE Trans., 1990, ED-37, pp. 1964–1968