Advanced Ultrapure Water Systems with Low Dissolved Oxygen for Native Oxide Free Wafer Processing

IEEE Transactions on Semiconductor Manufacturing

Volumn 5, Issue 2, 1992, Pages 121-127

  Yagi, Yasuyuki ^a   imaoka, Takashi ^a   Kasama, Yasuhiko ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS - OXIDATION; CLEAN ROOMS; SPECTROSCOPY, X-RAY;

DISSOLVED OXYGEN REMOVAL; NATIVE OXIDE GROWTH; ULTRAPURE WATER SYSTEMS;

INTEGRATED CIRCUITS, ULSI;

EID: 0026870007     PISSN: 08946507     EISSN: 15582345     Source Type: Journal    
DOI: 10.1109/66.136273     Document Type: Article

References (17)

1. N. Miki, H. Kikuyama, M. Maeno, J. Murota, and T. Ohmi, “Selective etching of native oxide by dry processing using ultra-clean anhydrous hydrogen fluoride,” in Tech. Dig. 1988 IEEE Int. Electron Devices Meeting, 1988, pp. 730–733.
2. N. Miki, H. Kikuyama, I. Kawanabe, M. Miyashita, and T. Ohmi, “Gas-phase selective etching of native oxide,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 107–115, June 1990.
3. N. Anzai, Y. Kureisi, S. Shimizu, and T. Nitta, “Ultra clean technology in advance semiconductor manufacturing,” in Proc. 1st Workshop on VLSI Ultra Clean Technology, Tokyo, Ultra Clean Society, Nov. 1989, pp. 75–94.
4. Y. Kasama, Y. Yagi, T. Imaoka, M. Kawakami, and T. Ohmi, “Advanced D.I. water system with low dissolved oxygen for ULSI processing,” in Proc. Institute of Environmental Sciences 36th Annual Technical Meeting, New Orleans, Apr. 1990, pp. 344–349.
5. Y. Kasama, Y. Yagi, T. Imaoka, and T. Ohmi, “Low dissolved oxygen ultrapure water systems for native oxide free wafer processing,” Extended Abstracts, 22nd Int. Conf. on Solid State Devices and Materials, Pt. II, Sendai, Japan Society of Applied Physics, Aug. 1990, pp. 1139–1142.
6. R. J. Archer, “Optical measurement of film growth on silicon and germanium surfaces in room air,” J. Electrochem. Soc., vol. 104, pp. 619–622, Oct. 1957.
7. F. Lukes, “Oxidation of Si and GaAs in at air room temperature,” Surf Sci., vol. 30, pp. 91–100, 1972.
8. S. I. Raider, R. Flitsh, and M. J. Palmer, “Oxide growth on etched silicon in air at room temperature,” J. Electrochem. Soc., vol. 122, pp. 413–418, Mar. 1988.
9. H. R. Philip and E. A. Taft, “An optical characterization of native oxides and thin thermal oxides on silicon,” J. Appl. Phys., vol. 53, no. 7, pp. 5224–5229, July 1982.
10. M. Miyawaki, S. Yoshitake, and T. Ohmi, “Improvement of aluminum-Si contact performance in native-oxide-free processing,” IEEE Electron Device Lett., vol. 11, no. 10, pp. 448–450, Oct. 1990.
11. T. Ohmi, M. Morita, E. Hasegawa, M. Kawakami, and K. Suma, “Control of native oxide growth in air and in water,” 175th Electrochem. Soc. Spring Meeting Extended Abstracts, May 1989, pp. 227–228
12. and ULSI Science and Technology/1989, C.M. Dsbum and J. M. Andrews, Eds., PV89-9, pp. 327–335, The Electro Chemical Society, Pennington, NJ 1989.
13. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma, “Native layer-free oxidation for very thin oxides,” Symp. on VLSI Technology, May 1989, pp. 71–72.
14. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, “Growth of native oxide on a silicon surface,” J. Appl. Phys., vol. 68, no. 3, pp. 1272–1281, Aug. 1990.
15. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma, “Control factor of native oxide growth on silicon in air or in ultrapure water,” J. Appl. Phys., vol. 155, pp. 562–564, 1989.
16. Y. Hiratsuka, H. Sato, N. Hashimoto, and T. Shinoda, “Specification of ultrapure water quality requirements for 16M-bit semiconductor devices,” in Japanese, Surface Control & Design of Cleaning, Kindai Hensyu Ltd., Japan, vol. 42, pp. 2–12, Summer 1989.
17. H. Sato, N. Hashimoto, T. Shinoda, and K. Takino, “Dissolved oxygen removal in ultrapure water for semiconductor manufacturing,” in Conf Proc. 10th Annual Meeting, Semiconductor Pure Water Conf., Santa Clara, CA, Balazs Lab., Feb. 1991, pp. 147–164.