Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

Japanese Journal of Applied Physics

Volumn 31, Issue 5, 1992, Pages L646-L648

  Ohmori, Yutaka ^a   Muro, Keiro ^a   Yoshino, Katsumi ^a   Onoda, Mitsuyoshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Conducting polymer; Field effect transistor (FET); Metal semiconductor field effect transistor; Poly(1,4 naphthalene vinylene); Poly(arylene vinylene); Poly(p phenylene vinylene)

Indexed keywords

POLYMERS - FILMS; SEMICONDUCTOR DEVICES, MESFET; TRANSISTORS, FIELD EFFECT - CHARACTERIZATION; TRANSISTORS, FIELD EFFECT - ELECTRIC PROPERTIES; TRANSISTORS, FIELD EFFECT - GATES;

SCHOTTKY GATES FIELD EFFECT TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026866685     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.L646     Document Type: Article

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