Bias-Dependence of the Intrinsic Element Values of InGaAs/InAlAs/InP Inverted Heterojunction Bipolar Transistor

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 5, 1992, Pages 1012-1014

  Vlcek, James C ^b,d   Fonstad, Clifton F ^b   Vai, Mankuan ^a  

^a NORTHEASTERN UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c SHARP CORPORATION   (Japan)

^d Epi Corporation ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE MEASUREMENTS; TRANSISTORS, BIPOLAR - MODELING;

MICROWAVE TRANSISTORS; S PARAMETER MEASUREMENT; SMALL SIGNAL MODELS;

TRANSISTORS, BIPOLAR;

EID: 0026866643     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.137411     Document Type: Article

References (5)

1. M. E. Kim, A. K. Oki, G. M. Gorman, D. K. Umemoto, and J. B. Camou, “GaAs heterojunction bipolar transistor device and IC technology for high performance analog and microwave applications,” • IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1286–1303, Sept. 1989.
2. Y. K. Chen, R. N. Nottenburg, M. B. Panish, R. A. Hamm, and D. A. Humphrey, “Subpicosecond InP/InGaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 10, pp. 267–269, June 1989.
3. H. Sato, J. C. Vlcek, C. G. Fonstad, B. Meskoob, and S. Prasad, “InGaAs/InAlAs/InP Collector-up microwave heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 457–459, Oct. 1990.
4. B. Meskoob, S. Prasad, M-K. Vai, J. C. Vlcek, H. Sato, C. G. Fonstad, and C. Bulutay, “Small signal equivalent circuit model for the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor,” submitted for
5. “Touchstone, Version 2.1,” EEsof, Inc., 1990.