Growth and characterization of epitaxial Ni and Co silicides

Materials Science Reports

Volumn 8, Issue 5, 1992, Pages 193-269

  von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS--VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY--APPLICATIONS; SEMICONDUCTING INTERMETALLICS--FILMS; SEMICONDUCTOR DEVICES--INTERFACES; SUPERLATTICES--SEMICONDUCTOR;

EPITAXIAL COBALT DISILICIDE FILMS; EPITAXIAL NICKEL DISILICIDE FILMS; METAL DISILICIDE DEFECT STRUCTURE; METAL DISILICIDE FILM DEPOSITION; METAL/DISILICIDE SCHOTTKY BARRIERS; PERMEABLE-BASE TRANSISTOR MATERIALS;

SEMICONDUCTOR DEVICES;

EID: 0026866232     PISSN: 09202307     EISSN: None     Source Type: Journal    
DOI: 10.1016/0920-2307(92)90003-J     Document Type: Review

References (249)

1. (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices
2. Self-aligned silicides or metals for very large scale integrated circuit applications
3. Formation of Embedded Monocrystalline NiSi2Grid Layers in Silicon by MBE
4. Control of a natural permeable CoSi2 base transistor
5. Recent models of Schottky barrier formation
6. The atomic structure of the NiSi2–Si(111) interface
7. Structural study of the CoSi2/Si(111) buried interface
8. Transmission electron microscopy of the formation of nickel silicides
9. Ion-Beam Induced Silicide Formation: Markers and Moving Species
10. Interactions Of Evaporated Nickel And Silicon Thin Films
11. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
12. On the stability of thin epitaxial NiSi2 layers on Si (111)
13. Systematic study of 3d transition metal-silicon interfaces by photoemission
14. Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr
15. NiSi2 layers grown on Si (111) by MBE and SPE
16. Room-temperature growth of ultrathin Ni films on Si(111)
17. Effects of Oxygen Pressure on Optical Absorption of YAG
18. Si(111) surface structures by glancing-incidence high-energy electron diffraction
19. A Kinetic Phase Diagram for Ultrathin Film Ni/Si(111): Auger Lineshape Results
20. Conductivity and mobility in very thin epitaxial NiSi2 layers
21. Orientations of Ultrathin NiSi2 Layers on Si
22. Growth of ultrathin single-crystal NiSi2 layers on Si(111)
23. Thin-film crystallography using reflection high-energy electron diffraction ‘‘rod intensity profiles’’: Ni/Si(111)
24. Crystalline intermediate phases in the formation of epitaxial NiSi2 on Si(111)
25. Ultrathin film growth of silicides studied using microprobe reflection high-energy electron diffraction and Auger
26. Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si
27. Determination of lattice mismatch in NiSi2 overlayers on Si(111)
28. The Role of Misfit Dislocation During Epitaxial Growth
29. Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy
30. Early stages of epitaxial CoSi2 formation on Si(111) surface as investigated by ARUPS, XPS, LEED and work function variation
31. Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure technique
32. The Effect of Formation Conditions on the Structural and Electrical Properties of Ultrathin Cobalt Silicide Films
33. Study of interface formation on Co/Si(111)-7×7 using angle-resolved photoemission
34. From the chemisorption of Co on Si(111)7×7 to the formation of epitaxial A and B-type CoSi2
35. In-Situ Studies of the MBE Growth of CoSi2 on Si (111) in a UHV Transmission Electron Microscope
36. Study of solid phase and molecular beam epitaxial cobalt silicide films on Si〈111〉 using electron energy loss spectroscopy
37. Study of CoSi2/Si strained layers grown by molecular beam epitaxy
38. Summary Abstract: Control of pinhole formation in epitaxial CoSi2 films
39. Kinetics of CoSi2 from evaporated silicon
40. Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)
41. Growth and Properties of Epitaxial Silicides on Si(III)
42. Growth of high quality CoSi2/Si - superstructures on Si (111)
43. The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2(111)
44. Surface chemical shifts and photoelectron diffraction in CoSi2
45. Photoemission study of the CoSi2(111)–Si surface
46. NATO ASI Series E: Applied Sciences, Vol. 160
47. Defects associated with the accommodation of misfit between crystals
48. Nucleation and Growth of Cosi2 on (001) and (111) Si
49. NATO ASI Series E: Applied Sciences, Vol. 160
50. Characterization of Ultrathin Cosi2 on Si(111) Layers.
51. On the Critical Layer Thickness of Strained-Layer Heteroepitaxial CoSi2 Films on 〈111〉Si
52. Determination of the elastic constants of a cobalt disilicide intermetallic compound
53. Thermal Strain Measurements in Epitaxial CoSi2/Si by Double Crystal X-Ray Diffraction
54. Surface and interface structure of epitaxial CoSi2 films on Si(111)
55. Growth and characterization of metal/semiconductor superlattices
56. Growth of CoSi2/Si Multilayer Structures
57. Schottky barrier heights of epitaxial Ni–silicides on Si(111)
58. Electrical Properties of Epitaxial Silicide-Silicon Interfaces
59. Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si
60. Transient capacitance study of epitaxial CoSi2/Si〈111〉 Schottky barriers
61. Single crystal silicide silicon interfaces: Structures and barrier heights
62. Investigation of Interface States on Mbe CoSi2/Si Schottky Contacts by Forward Bias Capacitance Measurement
63. Tunneling Spectroscopy of Single-Crystal CoSi2 and NiSi2 Epilayers on n-type Si
64. Electrical Transport in thin Silicide Films
65. Electrical Transport in Ultrathin Films of CoSi2 on Si(111)
66. Parallel and perpendicular transport in Si/CoSi2 and Si/CoSi2/Si heterostructures
67. The conductivity of thin metallic films according to the electron theory of metals
68. Quantum Transport and Surface Scattering
69. The metal–gate transistor
70. Fabrication and numerical simulation of the permeable base transistor
71. A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations
72. VIB-3 high-performance Si permeable-base transistors
73. 2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor
74. Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111)