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Surface Science

Volumn 268, Issue 1-3, 1992, Pages 238-264

The reaction of atomic oxygen with Si(100) and Si(111). II. Adsorption, passive oxidation and the effect of coincident ion bombardment

(3) Engstrom, J R a Bonser, D J a Engel, Thomas a

a UNIVERSITY OF WASHINGTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS - REACTION KINETICS; ION BEAMS - EFFECTS; OXYGEN - ADSORPTION; SURFACE PHENOMENA - MATHEMATICAL MODELS;

ATOMIC OXYGEN; ION BOMBARDMENT; PASSIVE OXIDATION;

SEMICONDUCTING SILICON;

EID: 0026863467 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(92)90966-A Document Type: Article

Times cited : (87)

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