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Volumn 39, Issue 4, 1992, Pages 792-802

Analysis of Current-Voltage Characteristics of Low-Temperature-Processed Polysilicon Thin-Film Transistors

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE ENGINEERING; SEMICONDUCTING SILICON--CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON--THIN FILMS;

EID: 0026854110     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.127467     Document Type: Article
Times cited : (59)

References (23)
  • 2
    • 0024739599 scopus 로고
    • Peripheral circuit integrated poly-Si TFT LCD with Gray scale representation
    • J. Ohwada, M. Takabatake, Y. A. Ono, A. Mimura, K. Ono, and N. Konishi, “Peripheral circuit integrated poly-Si TFT LCD with Gray scale representation,” IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1923–1928, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.9 , pp. 1923-1928
    • Ohwada, J.1    Takabatake, M.2    Ono, Y.A.3    Mimura, A.4    Ono, K.5    Konishi, N.6
  • 3
    • 9944259696 scopus 로고
    • Growth and physical properties of LPCVD polycrystalline silicon films
    • G. Harbeke, L. Krausbauer, E. F. Steigmeier, and A. E. Widmer, “Growth and physical properties of LPCVD polycrystalline silicon films,” J. Electrochem. Soc., vol. 131, pp. 675–682, 1984.
    • (1984) J. Electrochem. Soc , vol.131 , pp. 675-682
    • Harbeke, G.1    Krausbauer, L.2    Steigmeier, E.F.3    Widmer, A.E.4
  • 4
    • 0024639578 scopus 로고
    • Crystallization of LPCVD silicon films by low temperature annealing
    • T. Aoyama, G. Kawachi, N. Konishi, T. Suzuki, Y. Okajima, and K. Miyata, “Crystallization of LPCVD silicon films by low temperature annealing,” J. Electrochem. Soc., vol. 136, no. 4, pp. 1169–1173, 1989.
    • (1989) J. Electrochem. Soc , vol.136 , Issue.4 , pp. 1169-1173
    • Aoyama, T.1    Kawachi, G.2    Konishi, N.3    Suzuki, T.4    Okajima, Y.5    Miyata, K.6
  • 6
    • 0023435001 scopus 로고
    • Material properties and characteristics of polysilicon transistors for large area electronics
    • P. Migliorato and D. B. Meakin, “Material properties and characteristics of polysilicon transistors for large area electronics,” Appl. Surface Sci., vol. 30, pp. 353–371, 1987.
    • (1987) Appl. Surface Sci , vol.30 , pp. 353-371
    • Migliorato, P.1    Meakin, D.B.2
  • 7
    • 84916403680 scopus 로고
    • An active-matrix LC display addressed by re-crystallised poly-Si TFTs
    • A. Ishizu, Z. Suzuki, T. Matsumoto, H. Miki, and Y. Ohnishi, “An active-matrix LC display addressed by re-crystallised poly-Si TFTs,” in SID 85 Dig., 1984, pp. 282–285.
    • (1984) SID 85 Dig , pp. 282-285
    • Ishizu, A.1    Suzuki, Z.2    Matsumoto, T.3    Miki, H.4    Ohnishi, Y.5
  • 9
    • 0022665584 scopus 로고
    • Effect of hydrogen implantation on polysilicon p-n junctions
    • D. L. Chen, A. M. Guzman, and D. W. Greve, “Effect of hydrogen implantation on polysilicon p-n junctions,” IEEE Trans. Electron Devices, vol. ED-33, no. 2, pp. 270–274, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.2 , pp. 270-274
    • Chen, D.L.1    Guzman, A.M.2    Greve, D.W.3
  • 10
    • 17044444833 scopus 로고
    • Polysilicon transistors in VLSI MOS memories
    • H. Shichijo et al., “Polysilicon transistors in VLSI MOS memories,” in IEDM Tech. Dig., 1984, pp. 228–231.
    • (1984) IEDM Tech. Dig , pp. 228-231
    • Shichijo, H.1
  • 11
    • 6044232469 scopus 로고
    • Effects of hydrogenation on the off-state of polysilicon thin film transistors
    • B. A. Khan and R. Panjana, “Effects of hydrogenation on the off-state of polysilicon thin film transistors,” in Mat. Res. Soc. Symp. Proc., vol. 106, 1988, pp. 353–358.
    • (1988) Mat. Res. Soc. Symp. Proc , vol.106 , pp. 353-358
    • Khan, B.A.1    Panjana, R.2
  • 12
    • 0025576796 scopus 로고
    • Mechanism and device-to-device variation of leakage current in polysilicon thin film transistors
    • I-W. Wu, A. G. Lewis, T-Y. Huang, W. B. Jackson, and A. Chiang, “Mechanism and device-to-device variation of leakage current in polysilicon thin film transistors,” in IEDM Tech. Dig., 1990, pp. 867–870.
    • (1990) IEDM Tech. Dig , pp. 867-870
    • Wu, I.-W.1    Lewis, A.G.2    Huang, T.-Y.3    Jackson, W.B.4    Chiang, A.5
  • 13
    • 0024926187 scopus 로고
    • Polysilicon TFTs with low gate line resistance and low off-state current suitable for large area and high resolution LCDs
    • K. Ono, E. Kimura, T. Suzuki, A. Mimura, N. Konishi, and K. Miyata, “Polysilicon TFTs with low gate line resistance and low off-state current suitable for large area and high resolution LCDs,” in IEDM Tech. Dig., 1989, pp. 345–348.
    • (1989) IEDM Tech. Dig , pp. 345-348
    • Ono, K.1    Kimura, E.2    Suzuki, T.3    Mimura, A.4    Konishi, N.5    Miyata, K.6
  • 14
    • 0023541755 scopus 로고
    • Inversion-mode MOSFET's in polycrystalline silicon thin films: Characterization and modeling
    • F. Qian, D. M. Kim, H. K. Park, and J. L. Sachitano, “Inversion-mode MOSFET's in polycrystalline silicon thin films: Characterization and modeling,” IEEE Trans. Electron Devices, vol. ED-34, no. 12, 2439–2449, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.12 , pp. 2439-2449
    • Qian, F.1    Kim, D.M.2    Park, H.K.3    Sachitano, J.L.4
  • 15
  • 16
    • 84949077617 scopus 로고
    • Leakage current mechanisms in hydrogen-passivated fine-grain polycrystalline silicon on insulator MOSFET's
    • S. K. Madan and D. A. Antoniadis, “Leakage current mechanisms in hydrogen-passivated fine-grain polycrystalline silicon on insulator MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1518–1528, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.10 , pp. 1518-1528
    • Madan, S.K.1    Antoniadis, D.A.2
  • 17
    • 0022756844 scopus 로고
    • A comprehensive analytic model of accumulation-mode MOSFET's in polysilicon thin films
    • S. S. Ahmed, D. M. Kim, and H. Shichijo, “A comprehensive analytic model of accumulation-mode MOSFET's in polysilicon thin films,” IEEE Trans. Electron Devices, vol. ED-33, no. 7, pp. 973–985, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.7 , pp. 973-985
    • Ahmed, S.S.1    Kim, D.M.2    Shichijo, H.3
  • 18
    • 84941449851 scopus 로고
    • Design of drain junction in polysilicon MOSFET's
    • (in Japanese)
    • H. Hayashi, “Design of drain junction in polysilicon MOSFET's” (in Japanese), Trans. IEICE, vol. J73-C-II, no. 4, pp. 277–283, 1990.
    • (1990) Trans. IEICE , vol.J73-C-II , Issue.4 , pp. 277-283
    • Hayashi, H.1
  • 19
    • 0026222007 scopus 로고
    • Effect of hydrogenation on the leakage currents of laser annealed polysilicon TFTs
    • T. Aoyama, Y. Koike, Y. Okajima, N. Konishi, T. Suzuki, and K. Miyata, “Effect of hydrogenation on the leakage currents of laser annealed polysilicon TFTs,” IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 2058–2061, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.9 , pp. 2058-2061
    • Aoyama, T.1    Koike, Y.2    Okajima, Y.3    Konishi, N.4    Suzuki, T.5    Miyata, K.6
  • 20
    • 0021427789 scopus 로고
    • Physics of amorphous silicon based alloy field-effect transistors
    • M. Shur and M. Hack, “Physics of amorphous silicon based alloy field-effect transistors,” J. Appl. Phys., vol. 55, no. 10, pp. 3831–3842, 1984.
    • (1984) J. Appl. Phys , vol.55 , Issue.10 , pp. 3831-3842
    • Shur, M.1    Hack, M.2
  • 21
    • 0009732936 scopus 로고
    • Subthreshold behavior of thin film LPCVD polysilicon MOSFET's
    • A. O. Conde and J. G. Fossum, “Subthreshold behavior of thin film LPCVD polysilicon MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1563–1571, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.10 , pp. 1563-1571
    • Conde, A.O.1    Fossum, J.G.2
  • 22
    • 0021408209 scopus 로고
    • Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory
    • D. M. Kim, A. N. Khondker, S. S. Ahmed, and R. R. Shah, “Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory,” IEEE Trans. Electron Devices, vol. ED-31, no. 4, pp. 480–493, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.4 , pp. 480-493
    • Kim, D.M.1    Khondker, A.N.2    Ahmed, S.S.3    Shah, R.R.4
  • 23
    • 0000665690 scopus 로고
    • Density of gap states of silicon grain boundaries determined by optical absorption
    • W. B. Jackson, N. M. Johnson, and D. K. Biegelsen, “Density of gap states of silicon grain boundaries determined by optical absorption,” Appl. Phys. Lett., vol. 43, no. 2, pp. 195–917, 1983.
    • (1983) Appl. Phys. Lett , vol.43 , Issue.2 , pp. 195-917
    • Jackson, W.B.1    Johnson, N.M.2    Biegelsen, D.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.