Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles

Surface Science

Volumn 267, Issue 1-3, 1992, Pages 26-28

  Fujii, M ^a   Yamamoto, T ^a   Shigeta, M ^a   Takebe, T ^a   Kobayashi, K ^a   Hiyamizu, S ^b   Fujimoto, I ^c  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES - JUNCTIONS;

EQUILATERAL TRIANGLE PATTERNS; MODULATED SEMICONDUCTOR STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026853787     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(92)91080-U     Document Type: Article

References (4)

1. Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
2. Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates