Low-Temperature Furnace-Grown Reoxidized Nitrided Oxide Gate Dielectrics as a Barrier to Boron Penetration

IEEE Electron Device Letters

Volumn 13, Issue 4, 1992, Pages 217-219

  Fang, H ^a   Krisch, K S ^a   Gross, B J ^a   Sodini, Charles G ^a   Chung, J ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON--DIFFUSION; DIELECTRIC MATERIALS--APPLICATIONS; HEAT TREATMENT--ANNEALING; NITROGEN COMPOUNDS;

DUAL-GATE CMOS PROCESS; FIXED CHARGE ANNEALING; MOS CHANNEL REGION; REOXIDIZED NITRIDED OXIDE (ROXNOX); ROXNOX GATE DIELECTRICS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026853303     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145026     Document Type: Article

References (2)

1. C. Wong et al., ,Doping of n + and p + polysilicon in a dual-gate process,- in IEDM Tech. Dig., 1988, p. 238.
2. C.-Y. Lu et al., ,Anomalous C-V characteristics of implanted poly MOS structures in n + /P + dual-gate CMOS technology,- IEEE Electron Device Lett., vol. 10, no. 5, p. 192, 1989.