A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module

IEEE Journal of Solid-State Circuits

Volumn 27, Issue 4, 1992, Pages 554-562

  Ishihara, Noboru ^a   Sano, Eiichi ^a   Imai, Yuhki ^a   Yamane, Yasuro ^a   Kikuchi, Hiroyuki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER INTERFACES; INTEGRATED CIRCUITS--STABILITY; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR DEVICES, MESFET--APPLICATIONS;

DEGRADATION FACTOR; HIGH-GAIN WIDEBAND IC MODULE; LC RESONANCE DAMPING; MULTICHIP STRUCTURE; PARASITIC INFLUENCES; STABILITY ANALYSIS;

INTEGRATED CIRCUITS;

EID: 0026853139     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.126543     Document Type: Article

References (19)

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