-
1
-
-
0024104243
-
A model for GRIN-SCH-SQW diode lasers
-
S. R. Chinn, P. S. Zory, and A. R. Reisinger, “A model for GRIN-SCH-SQW diode lasers,” IEEE J. Quantum Electron., vol. 24, pp. 2191–2214, 1988.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, pp. 2191-2214
-
-
Chinn, S.R.1
Zory, P.S.2
Reisinger, A.R.3
-
2
-
-
0023363713
-
Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers
-
A. R. Reisinger, P. S. Zory, Jr., and R. G. Waters, “Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-23, pp. 993–999, 1987.
-
(1987)
IEEE J. Quantum Electron.
, vol.QE-23
, pp. 993-999
-
-
Reisinger, A.R.1
Zory, P.S.2
Waters, R.G.3
-
3
-
-
36549101697
-
Optimization of stripe width for low-threshold operation of quantum well laser diodes
-
J. S. Osinski, K. M. Dzurko, S. G. Hummel, and P. D. Dapkus, “Optimization of stripe width for low-threshold operation of quantum well laser diodes,” Appl. Phys. Lett., vol. 56, pp. 2487–2489, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 2487-2489
-
-
Osinski, J.S.1
Dzurko, K.M.2
Hummel, S.G.3
Dapkus, P.D.4
-
4
-
-
0024124836
-
Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structure
-
S. P. Cheng, F. Brillouet, and P. Correc, “Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structure,” IEEE J. Quantum Electron., vol. 24, pp. 2433–2440, 1988.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, pp. 2433-2440
-
-
Cheng, S.P.1
Brillouet, F.2
Correc, P.3
-
5
-
-
0021411129
-
Threshold current for AlGaAs quantum well lasers
-
A. Sugimura, “Threshold current for AlGaAs quantum well lasers,” IEEE J. Quantum Electron., vol. QE-20, pp. 336–343, 1984.
-
(1984)
IEEE J. Quantum Electron.
, vol.QE-20
, pp. 336-343
-
-
Sugimura, A.1
-
6
-
-
0023363963
-
A two-dimensional device simulator of semiconductor lasers
-
T. Ohtoshi, K. Yamaguchi, C. Nagaoka, T. Uda, Y. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron., vol. 32, pp. 627–638, 1987.
-
(1987)
Solid-State Electron.
, vol.32
, pp. 627-638
-
-
Ohtoshi, T.1
Yamaguchi, K.2
Nagaoka, C.3
Uda, T.4
Murayama, Y.5
Chinone, N.6
-
7
-
-
0020764010
-
Models of the static and dynamic behavior of stripe geometry lasers
-
J. Buus, “Models of the static and dynamic behavior of stripe geometry lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 953–960, 1983.
-
(1983)
IEEE J. Quantum Electron.
, vol.QE-19
, pp. 953-960
-
-
Buus, J.1
-
8
-
-
0022008746
-
Principles of semiconductor laser modeling
-
“Principles of semiconductor laser modeling,” IEE Proc., vol. 132, pt. J, pp. 42–51, 1985.
-
(1985)
IEE Proc.
, vol.132
, pp. 42-51
-
-
Buus, J.1
-
9
-
-
0024647910
-
Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers
-
R. Maciejko, J. M. Glinski, A. Champagne, J. Berger, and L. Samson, “Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers,” IEEE J. Quantum Electron., vol. 25, pp. 651–656, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, pp. 651-656
-
-
Maciejko, R.1
Glinski, J.M.2
Champagne, A.3
Berger, J.4
Samson, L.5
-
10
-
-
0025446243
-
Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers
-
M. Ueno, S. Asada, and S. Kumashiro, “Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers,” IEEE J. Quantum Electron., vol. 26, pp. 972–981, 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, pp. 972-981
-
-
Ueno, M.1
Asada, S.2
Kumashiro, S.3
-
11
-
-
84985777321
-
Two-dimensional simulation of quantum well lasers
-
G. H. Song, K. Hess, T. Kerkhoven, and U. Ravaioli, “Two-dimensional simulation of quantum well lasers,” Euro. Trans. Telecommun. and Related Technol., vol. 1, pp. 375–381, 1990.
-
(1990)
Euro. Trans. Telecommun. and Related Technol.
, vol.1
, pp. 375-381
-
-
Song, G.H.1
Hess, K.2
Kerkhoven, T.3
Ravaioli, U.4
-
12
-
-
0025432382
-
Use of Fermi statistics in two-dimensional numerical simulation of heterojunction devices
-
Z.-M. Li, S. P. McAlister, and C. M. Hurd, “Use of Fermi statistics in two-dimensional numerical simulation of heterojunction devices,” Semicond. Sci. Technol., vol. 5, pp. 408–413, 1990.
-
(1990)
Semicond. Sci. Technol.
, vol.5
, pp. 408-413
-
-
Li, Z.-M.1
McAlister, S.P.2
Hurd, C.M.3
-
13
-
-
84939379249
-
Pisces II user’s manual
-
Stanford, CA
-
M. R. Pinto, C. S. Rafferty, and R. W. Dutton, “Pisces II user’s manual,” Stanford Electron. Labs., Stanford, CA, 1984.
-
(1984)
Stanford Electron. Labs.
-
-
Pinto, M.R.1
Rafferty, C.S.2
Dutton, R.W.3
-
14
-
-
0017002382
-
Finite-element simulation of GaAs MESFET’s with lateral doping profiles and submicron gates
-
J. J. Barnes, R. J. Lomax, and G. I. Haddad, “Finite-element simulation of GaAs MESFET’s with lateral doping profiles and submicron gates,” IEEE Trans. Electron. Devices, vol. ED-23, pp. 1042–1048, 1976.
-
(1976)
IEEE Trans. Electron. Devices
, vol.ED-23
, pp. 1042-1048
-
-
Barnes, J.J.1
Lomax, R.J.2
Haddad, G.I.3
-
15
-
-
84945719300
-
Two-dimensional modeling of quantum-well semiconductor lasers
-
Dec., to be published
-
Z.-M. Li, K. M. Dzurko, and S. P. McAlister, “Two-dimensional modeling of quantum-well semiconductor lasers,” Trans. NASE-CODE VII, Dec. 1991, to be published.
-
(1991)
Trans. NASE-CODE VII
-
-
Li, Z.-M.1
Dzurko, K.M.2
McAlister, S.P.3
-
16
-
-
0025386018
-
Corrections to the expression of gain in GaAs
-
R. H. Yan, S. W. Corzine, L. A. Coldren, and I. Suemune, “Corrections to the expression of gain in GaAs,” IEEE J. Quantum Electron., vol. 26, pp. 213–216, 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, pp. 213-216
-
-
Yan, R.H.1
Corzine, S.W.2
Coldren, L.A.3
Suemune, I.4
-
18
-
-
0023996868
-
Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well laser
-
A. Kurobe, H. Furuyama, S. Naritsuka, N. Sugiyama, Y. Kokubun, and M. Nakamura, “Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well laser,” IEEE J. Quantum Electron., vol. 24, pp. 635–640, 1988.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, pp. 635-640
-
-
Kurobe, A.1
Furuyama, H.2
Naritsuka, S.3
Sugiyama, N.4
Kokubun, Y.5
Nakamura, M.6
-
20
-
-
0021436821
-
Anisotropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser
-
M. Yamada, S. Ogita, M. Yamagishi, and K. Tabata, “Anisotropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser,” IEEE J. Quantum Electron., vol. QE-21, pp. 640–645, 1985.
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, pp. 640-645
-
-
Yamada, M.1
Ogita, S.2
Yamagishi, M.3
Tabata, K.4
-
21
-
-
0026171950
-
Spontaneous emission and gain in GaAlAs quantum well lasers
-
M. P. Kesler and C. Harder, “Spontaneous emission and gain in GaAlAs quantum well lasers,” IEEE J. Quantum Electron., vol. 27, pp. 1812–1816, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1812-1816
-
-
Kesler, M.P.1
Harder, C.2
-
22
-
-
0025521440
-
Predicted performance of quantum-well GaAs-(GaAl)As optical amplifiers
-
P. J. Stevens and T. Mukai, “Predicted performance of quantum-well GaAs-(GaAl)As optical amplifiers,” IEEE J. Quantum Electron., vol. 26, pp. 1910–1917, 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, pp. 1910-1917
-
-
Stevens, P.J.1
Mukai, T.2
-
23
-
-
0022144440
-
Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers
-
O. Wada, T. Sanada, M. Kuno, and T. Fujii, “Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers,” Electron. Lett., vol. 21, pp. 1025–1026, 1985.
-
(1985)
Electron. Lett.
, vol.21
, pp. 1025-1026
-
-
Wada, O.1
Sanada, T.2
Kuno, M.3
Fujii, T.4
-
24
-
-
0013445477
-
Minority-carrier lifetime in AlxGa1-xAs
-
R. K. Ahrenkiel and D. J. Dunlavy, “Minority-carrier lifetime in AlxGa1-xAs,” J. Vac. Sci. Technol., vol. A7, pp. 822–826, 1989.
-
(1989)
J. Vac. Sci. Technol.
, vol.A7
, pp. 822-826
-
-
Ahrenkiel, R.K.1
Dunlavy, D.J.2
-
25
-
-
0018490917
-
Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguiding
-
K. Petermann, “Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguiding,” IEEE J. Quantum Electron., vol. QE-15, pp. 566–570, 1979.
-
(1979)
IEEE J. Quantum Electron.
, vol.QE-15
, pp. 566-570
-
-
Petermann, K.1
-
26
-
-
84945719301
-
Conduction and valence band offsets at the GaAs/AlGaAs heterostructure interface
-
INSPEC
-
M. Missous, “Conduction and valence band offsets at the GaAs/AlGaAs heterostructure interface,” in Properties of Gallium Arsenide, 2nd ed. INSPEC, 1990.
-
(1990)
Properties of Gallium Arsenide, 2nd ed.
-
-
Missous, M.1
-
28
-
-
0024138410
-
Electron capture and emission for midgap centers
-
J. S. Blakemore, “Electron capture and emission for midgap centers,” J. Phys. Chem. Solids, vol. 49, pp. 627–631, 1988.
-
(1988)
J. Phys. Chem. Solids
, vol.49
, pp. 627-631
-
-
Blakemore, J.S.1
-
29
-
-
33646424593
-
GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications
-
S. Adachi, “GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications,” J. Appl. Phys., vol. 58, pp. R1-29, 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, pp. R1-29
-
-
Adachi, S.1
-
30
-
-
11744308544
-
Optical functions of AlGaAs: Tables (0.5-6.0 eV)
-
2nd ed. INSPEC
-
“Optical functions of AlGaAs: Tables (0.5-6.0 eV),” in Properties of Gallium Arsenide, 2nd ed. INSPEC, 1990.
-
(1990)
Properties of Gallium Arsenide
-
-
Adachi, S.1
-
31
-
-
0017553475
-
Velocity-field characteristics of GaAs with I6c - Lc6 - Xc6 conduction band ordering
-
M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, “Velocity-field characteristics of GaAs with I6c - Lc6 - Xc6 conduction band ordering,” J. Appl. Phys., vol. 48, pp. 4587–4590, 1977.
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 4587-4590
-
-
Littlejohn, M.A.1
Hauser, J.R.2
Glisson, T.H.3
-
32
-
-
0001362308
-
Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy
-
W. T. Tsang, “Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 40, pp. 217–219, 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 217-219
-
-
Tsang, W.T.1
-
33
-
-
0039979950
-
Mobility of Gax-Al1-xAs alloys
-
A. K. Saxena, “Mobility of Gax-Al1-xAs alloys,” Phys. Rev., vol. 24, pp. 3295–3302, 1981.
-
(1981)
Phys. Rev.
, vol.24
, pp. 3295-3302
-
-
Saxena, A.K.1
-
34
-
-
0017482945
-
A computer analysis of hetero-junction and graded composition solar cells
-
J. E. Sutherland and J. R. Hauser, “A computer analysis of hetero-junction and graded composition solar cells,” IEEE Trans. Electron Devices, vol. ED-24, pp. 363–372, 1977.
-
(1977)
IEEE Trans. Electron Devices
, vol.ED-24
, pp. 363-372
-
-
Sutherland, J.E.1
Hauser, J.R.2
|