Electron mobility in Si inversion layers

Semiconductor Science and Technology

Volumn 7, Issue 3 B, 1992, Pages

  Masaki, K ^a   Taniguchi, K ^b   Hamaguchi, C ^b  

^a ANAN NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES - MATHEMATICAL MODELS; ELECTRONS - TRANSPORT PROPERTIES; PHONONS; SEMICONDUCTOR DEVICES, MOSFET - ELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES, MOSFET - SIMULATION;

ELECTRON MOBILITY; IONIZED IMPURITIES; SILICON INVERSION LAYERS; TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING SILICON;

EID: 0026839688     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/7/3B/151     Document Type: Article

References (0)