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Volumn 39, Issue 3, 1992, Pages 593-597

Modulating the Bipolar Junction Transistor Subjected to Neutron Irradiation for Integrated Circuit Simulation

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, DIFFERENTIAL; COMPUTER SIMULATION; INTEGRATED CIRCUITS; NEUTRONS--RADIATION EFFECTS;

EID: 0026838343     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123483     Document Type: Article
Times cited : (6)

References (14)
  • 2
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    • (1970) IEEE Trans. Nucl. Sci. , vol.NS-17 , pp. 341
    • Buehler, M.G.1
  • 3
    • 0025432627 scopus 로고
    • The effects of neutron-irradiation on the current gain of AlGaAs/GaAs heterojunction bipolar transistors
    • J. J. Liou, “The effects of neutron-irradiation on the current gain of AlGaAs/GaAs heterojunction bipolar transistors,” Phys. Status Solidi (a), vol. 119, p. 337, 1990.
    • (1990) Phys. Status Solidi (a) , vol.119 , pp. 337
    • Liou, J.J.1
  • 4
    • 0024103902 scopus 로고
    • Radiation effects on microelectronics in space
    • J. R. Srour and J. M. McGarrity, “Radiation effects on microelectronics in space,” Proc. IEEE, vol. 76, p. 1443, 1988.
    • (1988) Proc. IEEE , vol.76 , pp. 1443
    • Srour, J.R.1    McGarrity, J.M.2
  • 5
    • 0024104348 scopus 로고
    • Radiation testing of semiconductor devices for space electronics
    • R. L. Pease, A. H. Johnston, and J. L. Azarewicz, “Radiation testing of semiconductor devices for space electronics,” Proc. IEEE, vol. 76, d. 1510. 1988.
    • (1988) Proc. IEEE , vol.76 , pp. 1510
    • Pease, R.L.1    Johnston, A.H.2    Azarewicz, J.L.3
  • 6
    • 0038715667 scopus 로고
    • Designing ultrahard bipolar transistors
    • B. L. Gregory and C. W. Gwyn, “Designing ultrahard bipolar transistors,” IEEE Trans. Nucl. Sci., vol. NS-18, p. 340, 1971.
    • (1971) IEEE Trans. Nucl. Sci. , vol.NS-18 , pp. 340
    • Gregory, B.L.1    Gwyn, C.W.2
  • 8
    • 0014922120 scopus 로고
    • Application of neutron damage to semiconductor device studies
    • B. L. Gregory and C. W. Gwyn, “Application of neutron damage to semiconductor device studies,” IEEE Trans. Nucl. Sci., vol. NS-17, p. 325, 1970.
    • (1970) IEEE Trans. Nucl. Sci. , vol.NS-17 , pp. 325
    • Gregory, B.L.1    Gwyn, C.W.2
  • 9
    • 33748621800 scopus 로고
    • Statistics of the recombination of holes and electrons
    • W. Shockley and W. T. Read, “Statistics of the recombination of holes and electrons,” Phys. Rev., vol. 87, p. 835, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 835
    • Shockley, W.1    Read, W.T.2
  • 11
    • 0023384076 scopus 로고
    • Capacitance and thickness of the space-charge region of p/n junctions
    • J. J. Liou, F. A. Lindholm, and J. S. Park, “Capacitance and thickness of the space-charge region of p/n junctions,” IEEE Trans. Electron Devices, vol. ED-34, p. 1571, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 1571
    • Liou, J.J.1    Lindholm, F.A.2    Park, J.S.3
  • 13
    • 0003805738 scopus 로고    scopus 로고
    • Device Electronics for Integrated Circuits
    • 2nd ed. New York: Wiley
    • R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986.
    • Muller, R.S.1    Kamins, T.I.2
  • 14
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    • Recombination current in forward-biased p-n junctions
    • M. S. Shur, “ Recombination current in forward-biased p-n junctions,” IEEE Trans. Electron Devices, vol. 35, p. 1564, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1564
    • Shur, M.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.