High spatial resolution mapping of resistivity variations in semiconductors

Solid State Electronics

Volumn 35, Issue 3, 1992, Pages 423-433

  Kopanski, J J ^a   Lowney, J R ^a   Miles, D S ^a   Novotny, D B ^a   Carver, G P ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; SEMICONDUCTOR DEVICES;

LAPLACE EQUATIONS; RESISTIVITY VARIATIONS;

SEMICONDUCTOR MATERIALS;

EID: 0026837892     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90246-9     Document Type: Article

References (25)

1. On the scaling of an ion-implanted silicon MESFET
2. Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
3. The SCD Graphics Utilities
4. Designation: F525-88
5. Designation: F84-88
6. Resistivity Measurements on Germanium for Transistors
7. The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering
8. Spreading resistance measurements on starting silicon crystals