Fabrication of 3.5 GHz surface acoustic wave filters by ion projection lithography

Microelectronic Engineering

Volumn 17, Issue 1-4, 1992, Pages 245-248

  Brunger W H ^a   Buchmann, L M ^a   Kreutzer, M ^a   Torkler, M ^a   Zwicker, G ^a   Fleischmann, B ^a,b  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS - APPLICATIONS; LITHOGRAPHY - ION BEAM; SEMICONDUCTOR DEVICES - DESIGN;

ION PROJECTION LITHOGRAPHY; MASK FABRICATION; SURFACE ACOUSTIC WAVE FILTER;

SEMICONDUCTOR DEVICES;

EID: 0026837320     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(92)90049-W     Document Type: Article

References (7)

1. Fabrication of surface acoustic wave devices by using x-ray lithography
2. High-resolution technology for silicon-integrated surface acoustic wave devices
3. 35th Intern. Symp. Electron, Ion & Photon Beams
4. Masked ion beam resist exposure using grid support stencil masks