Performance of Thin-Film Transistors on Polysilicon Films Grown by Low-Pressure Chemical Vapor Deposition at Various Pressures

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 598-606

  Dozsa, Laszlo ^c   Papadimitriou, Leonidas ^a   Economou, Nicolaos ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Marconi Research Center   (United Kingdom)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS; SEMICONDUCTING SILICON--GROWTH; SEMICONDUCTOR DEVICES, MOS;

LPCVD POLYSILICON FILMS; MOS CAPACITORS; POLYSILICON FILMS; THIN-FILM TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026835667     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123484     Document Type: Article

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