An Analysis of the Large-Signal Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 3, 1992, Pages 465-474

  Pavlidis, Dimitris ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--ELECTRONIC PROPERTIES; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS);

TRANSISTORS, BIPOLAR;

EID: 0026835574     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.121721     Document Type: Article

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