Dynamic I-V Characteristics of an AlGaAs/GaAs-Based Optothyristor for Pulsed Power-Switching Applications

IEEE Electron Device Letters

Volumn 13, Issue 3, 1992, Pages 161-163

  Zhao, Jian H ^a   Larson, Dana ^a   Burke, Terry ^b   Weiner, Maurice ^c   Chin, Albert ^d   Ballingall, James M ^d   Yu, Tan hua ^d  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c EDT Laboratory US Army LABCOM ^*  (United States)

^d GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--CURRENT; ELECTRIC MEASUREMENTS--VOLTAGE; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; THYRISTORS--FABRICATION;

DISSIPATED ENERGY; DYNAMIC I-V CHARACTERISTICS; HETEROSTRUCTURE OPTOTHYRISTORS; PULSED POWER-SWITCHING APPLICATIONS;

THYRISTORS;

EID: 0026834719     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144997     Document Type: Article

References (14)

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