Post-stress interface trap generation: A new hot-carrier induced degradation phenomenon in passivated n-channel MOSFET's

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1992, Pages 112-115

  de Schrijver, E ^a   Heremans, P ^a   Bellens, R ^a   Groeseneken, G ^a   Maes, H E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; PASSIVATION; STRESSES;

HOLE INJECTION; INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 0026834413     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1992.187633     Document Type: Conference Paper

References (10)