Improving the ESD Failure Threshold of Silicided n-MOS Output Transistors by Ensuring Uniform Current Flow

IEEE Transactions on Electron Devices

Volumn 39, Issue 2, 1992, Pages 379-388

  Chatteriee, Amitava ^b  

^a Dallas Semiconductor ^*  (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTROSTATICS; SEMICONDUCTOR DEVICES, MOS;

ELECTROSTATIC DISCHARGE FAILURE THRESHOLD; SILICIDED N-MOS OUTPUT TRANSISTORS;

TRANSISTORS;

EID: 0026820351     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.121697     Document Type: Article

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