Interfacial reactions between rhodium and GaAs in bulk and thin film form

Materials Science and Engineering B

Volumn 12, Issue 3, 1992, Pages 223-235

  Schulz, K J ^a   Chang, Y A ^b  

^a IBM   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS - REACTION KINETICS; DIFFUSION; METALLIZING - INTERFACES; RHODIUM AND ALLOYS - THIN FILMS;

INTERFACIAL REACTIONS; SUPERSATURATED PHASES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026819942     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(92)90292-H     Document Type: Article

References (36)

1. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
2. Co/GaAs interfacial reactions
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4. Reactions between palladium and gallium arsenide: Bulk versus thin-film studies
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7. Interfacial Reactions Between Ni and GaAs
8. Interfacial Reactions Between Co and GaAs
9. Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure
10. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides