Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-si thin-film transistors

Japanese Journal of Applied Physics

Volumn 31, Issue 2R, 1992, Pages 206-212

  Yazaki, Masatoshi ^a,b   Takenakai, Satoshi ^a   Ohshima, Hiroyuki ^a,b  

^a SEIKO EPSON CORPORATION   (Japan)

^b Giant Electronics Technology Co ^*  (Japan)

Author keywords

Activation energy; Leakage current; Mos; Polycrystal; Silicon; Tet

Indexed keywords

ELECTRIC CONDUCTIVITY; SEMICONDUCTING SILICON--THIN FILMS; SEMICONDUCTOR DEVICES, MOS;

LEAKAGE CURRENTS;

TRANSISTORS;

EID: 0026818616     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.206     Document Type: Article

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