Fast Simulated Diffusion: An Optimization Algorithm for Multiminimum Problems and Its Application to MOSFET Model Parameter Extraction

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 11, Issue 2, 1992, Pages 228-234

  Sakurai, Takayasu ^a   Lin, Bill ^b   Newton, A Richard ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING--ALGORITHMS; COMPUTER PROGRAMS; INTEGRATED CIRCUITS, VLSI--COMPUTER AIDED DESIGN; OPTIMIZATION--APPLICATIONS;

FAST SIMULATED DIFFUSION (FSD); GLOBAL MINIMUM; HILL-DESCENDING METHOD; MOSFET MODEL PARAMETER EXTRACTION; MULTIMINIMUM PROBLEMS; OPTIMIZATION ALGORITHM;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026817489     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.124401     Document Type: Article

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