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Volumn , Issue , 1992, Pages 114-115
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Effect of rapid thermal plus conventional annealing on the microstructure of oxygen implanted SOI material
a a a
a
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
HEAT TREATMENT--ANNEALING;
MICROSTRUCTURE;
SEMICONDUCTOR DEVICES;
DEFECT DENSITY;
HEATING RATE EFFECTS;
RAPID THERMAL ANNEALING;
SEPARATION BY IMPLANTED OXYGEN;
SIMOX;
SEMICONDUCTOR MATERIALS;
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EID: 0026727525
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (3)
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