180 GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1992, Pages 165-168

  Kwon, Y ^a   Pavlidis, D ^a   Marsh, P ^a   Tutt, M ^a   Ng, G I ^a   Brock, T ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS, HIGH ELECTRON MOBILITY;

FREQUENCY DOUBLERS;

INTEGRATED CIRCUITS, MONOLITHIC;

EID: 0026679434     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)