Base-dopant density variation with emitter size in polysilicon-emitter transistors

Proceedings of the 1991 Bipolar Circuits and Technology Meeting

Volumn , Issue , 1992, Pages 267-270

  Yun, B H ^a   Cunningham, B ^a   Snare, J ^a   Barnes, K ^a   Lange, R C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--DOPING;

BASE-DOPANT DENSITY; POLYSILICON-EMITTER TRANSISTORS; SUBMICRON EMITTERS;

TRANSISTORS, BIPOLAR;

EID: 0026678382     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)