메뉴 건너뛰기




Volumn 28, Issue 2, 1992, Pages 153-154

DFB-LD/modulator integrated light source by bandgap energy controlled selective movpe

Author keywords

Epitaxy and epitaxial growth; Integrated optics; Light sources

Indexed keywords

INTEGRATED OPTICS; LASERS, SEMICONDUCTOR; LIGHT--MODULATORS; OPTICAL COMMUNICATION; QUANTUM THEORY;

EID: 0026628548     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920095     Document Type: Article
Times cited : (63)

References (6)
  • 1
    • 0026103348 scopus 로고
    • Subvolt operation of electroabsorption modulator integrator with 2/4-shifted DFB laser for 2–4 Gb/s 135 km transmission
    • Tanaka, H., Suzuki, M., Taga, H., Yamamoto, S., and Matsushima, Y.: ‘Subvolt operation of electroabsorption modulator integrator with 2/4-shifted DFB laser for 2–4 Gb/s 135 km transmission’, Electron. Lett., 1991, 27, pp. 390–391
    • (1991) Electron. Lett. , vol.27 , pp. 390-391
    • Tanaka, H.1    Suzuki, M.2    Taga, H.3    Yamamoto, S.4    Matsushima, Y.5
  • 2
    • 0025699570 scopus 로고
    • High-power and high-speed semiinsulating BH structure monolithic electroabsorption modulator/DFB laser light source
    • Soda, H., Furutsu, M., Sato, K., Okazaki, N., Yamazaki, S., Nishi-Moto, H., and Ishikawa, H.: ‘High-power and high-speed semiinsulating BH structure monolithic electroabsorption modulator/DFB laser light source’, Electron. Lett., 1990, 26, pp. 9–10
    • (1990) Electron. Lett. , vol.26 , pp. 9-10
    • Soda, H.1    Furutsu, M.2    Sato, K.3    Okazaki, N.4    Yamazaki, S.5    Nishi-Moto, H.6    Ishikawa, H.7
  • 4
    • 0003510854 scopus 로고
    • Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique
    • WeB7-l
    • Kato, T., Sasaki, T., Kida, N., Komatsu, K., and Mito, I.: ‘Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique’. Tech. Dig. of ECOC/IOOC ’91, 1991, Part 2, WeB7-l, pp. 429–432
    • (1991) Tech. Dig. of ECOC/IOOC ’91 , pp. 429-432
    • Kato, T.1    Sasaki, T.2    Kida, N.3    Komatsu, K.4    Mito, I.5
  • 5
    • 0025791260 scopus 로고
    • Selective area MOVPE of GalnAs/InP heterostructures on masked and nonplaner (100) and {111} substrates
    • Galeuchet, Y. D., and Rontgen, P.: ‘Selective area MOVPE of GalnAs/InP heterostructures on masked and nonplaner (100) and {111} substrates’, J. Cryst. Growth, 1991, 107, pp. 147–150
    • (1991) J. Cryst. Growth , vol.107 , pp. 147-150
    • Galeuchet, Y.D.1    Rontgen, P.2
  • 6
    • 0025720825 scopus 로고
    • Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: To thickness- modulated waveguide structures
    • Colas, E., Shahar, A., Soole, J.B.D., Tomlinson, W. J., Hayes, J. R., Caneau, C., and Bhat, R.: ‘Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: To thickness- modulated waveguide structures’, J. Cryst. Growth, 1991, 107, pp. 226–230
    • (1991) J. Cryst. Growth , vol.107 , pp. 226-230
    • Colas, E.1    Shahar, A.2    Soole, J.B.D.3    Tomlinson, W.J.4    Hayes, J.R.5    Caneau, C.6    Bhat, R.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.