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Volumn 27, Issue 12, 1991, Pages 1056-1058

Optical Tuning Of Monolithic Ln0.53Ga0.47As/Ln0.52Al0.48As/Inp Modulation-Doped Field-Effect Transistor Oscillators at X and R Band

Author keywords

Oscillators; Semiconductor devices and materials; Transistors

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC--MICROWAVES; OSCILLATORS, MICROWAVE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0026418144     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910656     Document Type: Article
Times cited : (5)

References (12)
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  • 3
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  • 4
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  • 5
    • 0020833156 scopus 로고
    • Optical control of GaAs Mesfets
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    • De Salles, A.A.1
  • 6
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    • Microwave performance of an optically controlled AIGaAs/GaAs high electron mobility transistor and GaAs MESFET
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    • Simons, R.1
  • 7
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    • Initial observations of optical injection locking of GaAs metal-semiconductor field-effect tran-sistor oscillators
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    • De Salles, A.A.1    Forrest, J.R.2
  • 8
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    • 0.62As pseudomorphic HEMTs
    • Mishra, V.K., Brown, A.S., and Rosenbaum, S.E.: ‘DC and RF performance of 01 µan gate length Al0.48In0.52As/Ga0.38In0.62As pseudomorphic HEMTs’. 1988 IEDM Tech. Dig., p. 180
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    • Mishra, V.K.1    Brown, A.S.2    Rosenbaum, S.E.3
  • 9
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    • W-band monolithic oscillator using InAlAs/InGaAs HEMT
    • Kwon, Y., Pavilidis, D., Tutt, M., Ng, G.I., Lai, R., and Brock, T.: ‘W-band monolithic oscillator using InAlAs/InGaAs HEMT’, Electron. Lett., 1990, 26, pp. 1425-1426
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  • 11
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    • Transit-time photoconductivity in high-field FET channels
    • Darling, R.: ‘Transit-time photoconductivity in high-field FET channels’, IEEE Trans., 1987, ED-34, p. 433
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.