50GHz InGaAs Edge-Coupled pin Photodetector

Electronics Letters

Volumn 27, Issue 12, 1991, Pages 1073-1075

  Wake, D ^a   Spooner, T P ^a   Perrin, S D ^a   Henning, I D ^a  

^a MARTLESHAM HEATH   (United Kingdom)

Author keywords

Optical detectors; Optoelectronics; Photodetectors

Indexed keywords

FIBER OPTICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

EDGE-COUPLED PHOTODETECTORS; PIN PHOTODETECTORS; SINGLE MODE FIBERS;

PHOTODETECTORS;

EID: 0026418133     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910666     Document Type: Article

References (4)

1. Wang, S.Y., Carey, K.W., and Kolner, B.H.: ‘A front-side-illumi-nated InP/InGaAs/InP p-i-n photodiode with a - 3 dB bandwidth in excess of 20 GHz’, IEEE Trans., 1987, ED-34, pp. 938-940
2. Wake, D., Walling, R.H., Henning, I.D., and Parker, D.G.: ‘Planar-junction, top-illuminated InGaAs/InP p-i-n photodiode with bandwidth of 25 GHz’, Electron. Lett., 1989, 25, pp. 967-968
3. Tucker, R.S., Taylor, A.J., Burrus, C.A., Eisenstein, G., and Weisenfeld, J.M.: ‘Coaxially mounted 67GHz bandwidth InGaAs PIN photodiode’, Electron. Lett., 1986, 22, pp. 917-918
4. Bowers, J.E., and Burrus, C.A.: ‘Ultrawide-band long-wavelength p-i-n photodetectors’, J. Lightwave Technoi, 1987, LT-5, pp. 1339-1350