Structural study of coordination defects in amorphous GaAs by a combination of exafs and x-ray anomalous scattering experiments

Journal of Non-Crystalline Solids

Volumn 137-138, Issue PART 1, 1991, Pages 131-134

  Udron, D ^a,c   Theye M L ^a   Raoux, D ^b   Flank, A M ^c   Lagarde, P ^c   Gaspard, J P ^d  

^a CNRS   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c LURE UPR CNRS 8 B209D UPS 91405 Orsay Cedex France ^*

^d UNIVERSITY OF LIÈGE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SOLIDS - DEFECTS; X-RAYS - SCATTERING;

AMORPHOUS SEMICONDUCTORS; COORDINATION DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026415527     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(05)80074-2     Document Type: Article

References (9)

1. Optical pumping and g-factor of the 3P0 state of the first excited configuration of rare gases odd isotopes
2. Effect of wrong bonds on the electronic structure of amorphous III-V alloys
3. EXAFS study of the local atomic structure in amorphous InP
4. Investigation of disorder effects in amorphous GaAs and GaP by EXAFS
5. The structure of tetrahedrally coordinated amorphous semiconductors