Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

Journal of Crystal Growth

Volumn 115, Issue 1-4, 1991, Pages 639-642

  Koide, N ^a   Kato, H ^a   Sassa, M ^a   Yamasaki, S ^a   Manabe, K ^a   Hashimoto, M ^b   Amano, H ^c   Hiramatsu, K ^c   Akasaki, I ^c  

^a Toyoda Gosei Co Ltd   (Japan)

^b Rd Management Section   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ORGANOMETALLICS; SEMICONDUCTOR DIODES, LIGHT EMITTING; SILICON AND ALLOYS;

GALLIUM NITRIDE; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026414620     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90818-P     Document Type: Article

References (5)