Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD

Journal of Crystal Growth

Volumn 115, Issue 1-4, 1991, Pages 623-627

  Suzuki, Akira ^a   Fujii, Yoshihisa ^a   Saito, Hajime ^a   Tajima, Yoshimitsu ^a   Furukawa, Katsuki ^a   Nakajima, Shigeo ^a  

^a Central Research Laboratories Corporate Research Development Group ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COLOR; SEMICONDUCTOR DIODES, LIGHT EMITTING;

BLUE EMISSIONS; CARRIER CONCENTRATION;

SILICON CARBIDE;

EID: 0026414611     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90815-M     Document Type: Article

References (9)

1. Fabrication of SiC Blue LEDs Using Off-Oriented Substrates
2. Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
3. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure