Initial growth stage of InAs/GaAs studied by RHEED-TRAXS method

Journal of Crystal Growth

Volumn 111, Issue 1-4, 1991, Pages 110-114

  Shigetomi, J ^a   Fuwa, K ^a   Shimizu, S ^a   Yamakawa, H ^a   Ino, S ^b  

^a ULVAC INC   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - DIFFRACTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

ISOTHERMAL DESORPTION SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0026413376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90956-6     Document Type: Article

References (13)

1. Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)
2. Growth and transport properties of InAs epilayers on GaAs