Atomic layer molecular beam epitaxy (ALMBE): growth kinetics and applications

Journal of Crystal Growth

Volumn 111, Issue 1-4, 1991, Pages 194-199

  Briones, F ^a   Ruiz, A ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONS - DIFFRACTION; MOLECULAR BEAM EPITAXY;

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026413224     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90970-G     Document Type: Article

References (16)

1. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
2. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
3. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
4. Atomic layer epitaxy
5. Optical studies of molecular-beam epitaxy growth of GaAs and AlAs