Transient radiation response of VLSI circuits: Shadowing effects and pulse widths dependence in laser measurements

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1429-1433

  Jonsson M ^a   Mattsson, S ^a  

^a SAAB AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATORS; LASER PULSES;

SHADOWING EFFECT; TRANSIENT RADIATION RESPONSES;

INTEGRATED CIRCUITS, VLSI;

EID: 0026407429     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124128     Document Type: Article

References (5)

1. A. H. Johnston, R. E. Plaag, and M. P. Baze, “The effect of circuit topology on radiation induced latchup”, Trans. Nuc. Sci, Vol. 36, No. 6, pp. 2229–2237, (1989).
2. M. Jönsson and S. Mattsson, “Investigation of shadowing effects from VLSI-circuit metal grids occurring in laser simulation of transient radiation”, (unpublished, Saab Space, Gothenburg, Sweden, 1990).
3. B. Sigfridsson and J. L. Lindström “Transient radiation effects on VLSI structures”, Radiation effects and Defects in Solids, Vol. 111–112 (1–2), pp. 233–247, (1989).
4. A. H. Johnston and M. P. Baze, “Experimental methods for determining latchup paths in integrated circuits”, IEEE Trans. Nuc. Sci, Vol NS-32, No. 6, pp. 4260–4265, (1985).
5. M. P. Baze and A. H. Johnston, “Testing considerations for radiation induced latchup”, IEEE Trans. Nuc. Sci, Vol NS-34, No. 6, pp. 1730–1735, (1987).