Laterally-doped channel(LDC) structure for sub-quarter micron MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 113-117

  Matsuki, T ^a   Asakura, F ^a   Saitoh, S ^a   Matsumoto, H ^a   Fukuma, M ^a   Kawamura, N ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS--DOPING;

LATERALLY DOPED CHANNEL STRUCTURE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026407199     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)