Confinement of excess arsenic incorporated in thin layers of mbe-grown low-temperature GaAs

Institute of Physics Conference Series

Volumn 120, Issue , 1991, Pages 37-42

  Ibbetson, J P ^a   Bolognesi, C R ^a   Weman, H ^a   Gossard, A C ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY - APPLICATIONS; PHOTOLUMINESCENCE - APPLICATIONS; SEMICONDUCTING FILMS - OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE - INTERFACES;

ALUMINUM ARSENIDE; EXCESS ARSENIDE INCORPORATION; QUANTUM WELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026404145     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)