Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1310-1314

  Stassinopoulos, E G ^b   Peyrotte, C ^a   Baiget, A ^a  

^a THALES ALENIA SPACE   (France)

^b Radiation Physics Associates ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICS; ION BEAMS;

LINEAR ENERGY TRANSFER; SINGLE EVENT BURNOUTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026400772     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124110     Document Type: Article

References (7)

1. Waskiewicz, A. E., “Burnout of Power MOS Transistors with Californium-252 and Cyclotron-88 Heavy Ions”, presented at Radiation Hardened Electronics Technology Meeting, Melbourne, Florida, October 1986.
2. Brucker, G.J., P. Measel, D. Oberg, J. Wert, and T. Criswell, “SEU Sensitivity of Power Converters with MOSFETs in Space”, IEEE trans. Nucl. Sci, Vol. NS-34, No. 6, December 1987.
3. Oberg, D.L. and Wert, J.L., “First Non-Destructive Measurements of Power MOSFET Single Event Burnout Cross Sections”, IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, December 1987.
4. Waskiewicz, A.E. and J.W. Groninger, “Final Power MOSFET Project Report”, Burnout Thresholds and Cross Sections of Power MOS Transistors with Heavy Ions, Rockwell International, 1990.
5. Stapor, W.J., P.T. Mc Donald, A.B. Campbell, A.R. Knudson, and B.G. Giagola, “Charge Collection in Silicon for Ions of Different Energy but Same Linear Energy Transfer (LET)”, IEEE Trans. Nucl. Sci., Vol. NS-35, No. 6, p. 1585, December 1988.
6. Jordan, T., “NOVICE”: A Radiation Transport and Shielding Code”, Experimental and Mathematical Physics Consultant, Report EMP.L 82.001, January 1982.
7. Adams, J.H., “Cosmic Ray Effects on Microelectronics, Part IV”, NRL Memorandum Report 5901, Naval Research Laboratory, December 1986.