Analytical Device Model for Submicrometer MOSFET'S

IEEE Transactions on Electron Devices

Volumn 38, Issue 12, 1991, Pages 2662-2668

  Sonoda, Ken'ichiro ^a   Taniguchi, Kenji ^a   Hamaguchi, Chihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES;

DRAIN CURRENT MODELS; SUBMICROMETER DEVICES; VELOCITY OVERSHOOT EFFECTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026399115     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158688     Document Type: Article

References (22)

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