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Volumn 10, Issue 4, 1991, Pages 205-213

Charge transfer in the presence of potential barriers

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICES, CHARGE TRANSFER; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

EID: 0026391399     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb051699     Document Type: Review
Times cited : (3)

References (15)
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  • 2
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  • 3
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    • An evaluation of submicron potential barriers using charge-transfer devices
    • Aug
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  • 5
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    • Jan.
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  • 6
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    • Nov., presented at the, Boston
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    • (1982) IEEE/SIAM Conference on the Numerical Simulation of VLSI Devices
    • Mandelman, J.A.1    Hwang, P.B.2
  • 7
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    • June
    • J. E. Carnes, W. F. Kosonocky, and E. G. Ramberg, “Free charge transfer in charge-coupled devices,” IEEE Trans. Electron Dev., vol. ED-19, pp. 798–808, June 1972.
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  • 8
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  • 9
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  • 12
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.