18-40 GHz 13 dBm low noise GaAs FET YIG tuned oscillator

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1991, Pages 209-212

  Khanna, A P S ^a   Hauptman, John ^a  

^a Avantek Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

FET-TUNED OSCILLATORS; SUBMICRON FET; YIG-TUNED OSCILLATORS;

OSCILLATORS, MICROWAVE;

EID: 0026388557     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)