MISNAN—A Physically Based Continuous MOSFET Model for CAD Applications

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 10, Issue 12, 1991, Pages 1512-1529

  Boothroyd, A R ^a   Tarasewicz, Stan W ^b   Slaby, Cezary ^b  

^a CARLETON UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI--COMPUTER AIDED DESIGN;

CIRCUIT-LEVEL MODELS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026384103     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.103501     Document Type: Article

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