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Volumn 38, Issue 6, 1991, Pages 1315-1322

Single-event burnout of power bipolar junction transistors

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATORS; COSMIC RAYS; TRANSISTORS--JUNCTIONS;

EID: 0026382712     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124111     Document Type: Article
Times cited : (32)

References (13)
  • 2
    • 77957225545 scopus 로고
    • Analytical Model for Single Event Burnout of Power MOSFETs
    • J.H. Hohl and K.F. Galloway, “Analytical Model for Single Event Burnout of Power MOSFETs,” IEEE Trans. Nuc. Sci., NS-34, pp. 1275–1280, 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , pp. 1275-1280
    • Hohl, J.H.1    Galloway, K.F.2
  • 3
    • 77957221316 scopus 로고
    • First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections
    • D.L. Oberg and J.L. Wert, “First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections,” IEEE Trans. Nucl. Sci., NS-34, pp. 1736–1741, 1987.
    • (1987) NS-34 , pp. 1736-1741
    • Oberg, D.L.1    Wert, J.L.2
  • 5
    • 84941868515 scopus 로고
    • SEU-Hard Power MOSFETs
    • T.A. Fischer, “SEU-Hard Power MOSFETs,” in 1987 GOMAC DIGEST, 1987, pp. 131–134.
    • (1987) 1987 GOMAC DIGEST , pp. 131-134
    • Fischer, T.A.1
  • 6
    • 0019279476 scopus 로고
    • High Dose Rate Burnout in Silicon Epitaxial Transistors
    • T.F. Wrobel and J.L. Azarewicz, “High Dose Rate Burnout in Silicon Epitaxial Transistors,” IEEE Trans. Nuc. Sci., NS-27, pp. 1411–1415, 1980.
    • (1980) IEEE Trans. Nuc. Sci. , vol.NS-27 , pp. 1411-1415
    • Wrobel, T.F.1    Azarewicz, J.L.2
  • 7
    • 0004286686 scopus 로고
    • New York: John Wiley & Sons
    • B.J. Baliga, Modern Power Devices. New York: John Wiley & Sons, pp. 62–129, 1987.
    • (1987) Modern Power Devices , pp. 62-129
    • Baliga, B.J.1
  • 8
    • 0009717662 scopus 로고
    • Reading Mass: Addison-Wesley Publishing Company
    • G.W. Neudeck, The Bipolar Junction Transistor. Reading Mass: Addison-Wesley Publishing Company, p. 25, 1983.
    • (1983) The Bipolar Junction Transistor , pp. 25
    • Neudeck, G.W.1
  • 10
    • 44449105697 scopus 로고
    • Features of a Heavy-Ion-Generated-Current Filament Used in Modeling Single-Event Burnout of Power MOSFETs
    • M. S. Thesis, University of Arizona
    • G.H. Johnson, “Features of a Heavy-Ion-Generated-Current Filament Used in Modeling Single-Event Burnout of Power MOSFETs,” M. S. Thesis, University of Arizona, 1990.
    • (1990)
    • Johnson, G.H.1
  • 11
    • 0024946276 scopus 로고
    • Features of the Triggering Mechanism for Single Event Burnout of Power MOSFETs
    • J.H. Hohl and G.H. Johnson, “Features of the Triggering Mechanism for Single Event Burnout of Power MOSFETs,” IEEE Trans. Nuc. Sci., NS-36, pp. 2260–2266, 1989.
    • (1989) IEEE Trans. Nuc. Sci. , vol.NS-36 , pp. 2260-2266
    • Hohl, J.H.1    Johnson, G.H.2
  • 13
    • 0006658834 scopus 로고
    • Measurement of the Number of Impurities in the Base Layer of a Transistor
    • H.K. Gummel, “Measurement of the Number of Impurities in the Base Layer of a Transistor,” Proc. of the IRE, vol 49, p 834, 1961.
    • (1961) Proc. of the IRE , vol.49 , pp. 834
    • Gummel, H.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.