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Volumn 9, Issue 12, 1991, Pages 1635-1638

Integrated Optical Receivers using MSM Detectors

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; INTEGRATED OPTICS; OPTICAL DEVICES; SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0026381435     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.108707     Document Type: Article
Times cited : (91)

References (12)
  • 2
    • 84941512068 scopus 로고
    • A fully integrated high sensitivity p-i-n/FET optical receiver at 250 Mbaud
    • D. Rogers and R. Bates, “A fully integrated high sensitivity p-i-n/FET optical receiver at 250 Mbaud,” in Proc. Eur. Conf. Opt. Comm., 1988.
    • (1988) Proc. Eur. Conf. Opt. Comm.
    • Rogers, D.1    Bates, R.2
  • 3
    • 84941509675 scopus 로고
    • Interdigitated metal-semiconductor-metal detectors
    • D. L. Rogers, “Interdigitated metal-semiconductor-metal detectors,” in Proc. Picosecond Elect, and Optoelectron., vol. 4, pp. 184-188, 1989.
    • (1989) Proc. Picosecond Elect , vol.4 , pp. 184-188
    • Rogers, D.L.1
  • 4
    • 0024090785 scopus 로고
    • High-speed 1.3-µm GaInAs detectors fabricated on GaAs substrates
    • D. L. Rogers et al., “High-speed 1.3-µm GaInAs detectors fabricated on GaAs substrates,” IEEE Electron Dev. Lett., vol. 9, no. 10, pp. 515-517, 1988.
    • (1988) IEEE Electron Dev. Lett. , vol.9 , Issue.10 , pp. 515-517
    • Rogers, D.L.1
  • 5
    • 0025522696 scopus 로고
    • Transit-time limited frequency response of In-Ga-As MSM photodetectors
    • J. Soole and H. Schumacher, “Transit-time limited frequency response of In-Ga-As MSM photodetectors,” IEEE Trans. Electron. Dev., vol. 37, no. 11, pp. 2285-2291, 1990.
    • (1990) IEEE Trans. Electron. Dev. , vol.37 , Issue.11 , pp. 2285-2291
    • Soole, J.1    Schumacher, H.2
  • 6
    • 0001196277 scopus 로고
    • Properties of alternately charged coplanar parallel strips by conformal mappings
    • Y. Lim and R. Moore, “Properties of alternately charged coplanar parallel strips by conformal mappings,” IEEE Trans. Electron. Dev., vol. ED-15, no. 3, 173-180, 1968.
    • (1968) IEEE Trans. Electron. Dev. , vol.ED-15 , Issue.3
    • Lim, Y.1    Moore, R.2
  • 7
    • 0022418822 scopus 로고
    • Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systems
    • R. Sussmann et al., “Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systems,” Electron. Lett., vol. 21, no. 14, pp. 593-595, 1985.
    • (1985) Electron. Lett. , vol.21 , Issue.14 , pp. 593-595
    • Sussmann, R.1
  • 8
    • 34548278636 scopus 로고
    • Physics of Semiconductor Devices
    • S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
    • (1981) New York: Wiley
    • Sze, S.M.1
  • 9
    • 84941488132 scopus 로고
    • Bandwidth enhancement in metal-semiconductor-metal photodetectors by internal electric field modification
    • July
    • J. Burroughes et al., “Bandwidth enhancement in metal-semiconductor-metal photodetectors by internal electric field modification,” Photon. Lett., July 1991.
    • (1991) Photon. Lett.
    • Burroughes, J.1
  • 11
    • 0025493345 scopus 로고
    • 2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaA-on-Si
    • S. Subbarao et al., “2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaA-on-Si,” IEEE Trans. Microwave Theory and Techniques, vol. 38, no. 9, p. 1199, 1991.
    • (1991) IEEE Trans. Microwave Theory and Techniques , vol.38 , Issue.9 , pp. 1199
    • Subbarao, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.