1/f noise in n-and p-channel MOS devices through irradiation and annealing

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1297-1303

  Riewe, L C ^b   Fleetwood, D M ^a   Shaneyfelt, M R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b L&M Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT--ANNEALING; SEMICONDUCTING SILICON--CHARGE CARRIERS; TRANSISTORS;

1/F NOISE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026376339     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124108     Document Type: Article

References (23)

1. C. T. Sah and F. H. Hielscher, “Evidence of the Surface Origin of the 1/f Noise,” Phys. Rev. Lett. 17, 956 (1966).
2. S. Christensson, I. Lundstrom, and C. Svensson, “Low Frequency Noise in MOS Transistors -I Theory,” Solid St. Electron. 11, 797 (1968), and S. Christennson and I. Lundstrom, “Low Frequency Noise in MOS Transistors -II Experiments,” Ibid., 813.
3. G. Blasquez and A. Boukabache, in Noise in Physical Systems and 1/f Noise, ed. M. Savelli, G. Lecoy and J-P. Nougier (Elsevier, Amsterdam, 1983), pp. 303–306.
4. M. J. Kirton and M. J. Uren, “Noise in Solid State Microstructures: A New Perspective on Individual Defects, Interface States, and Low-Frequency 1/f Noise,” Adv. in Phys. 38, 367 (1989).
5. T. L. Meisenheimer and D. M. Fleetwood, “Effect of Radiation-Induced Induced Charge On 1/f Noise In MOS Devices,” IEEE Trans. Nucl. Sci. NS-37, 1696 (1990). Because of an error in converting to the normalized noise power, values of K in this reference should be divided by 2. The conclusions are unaffected by this correction.
6. J. H. Scofield, T. P. Doerr, and D. M. Fleetwood, “Correlation Between Preirradiation 1/f Noise and Postirradiation Oxide-Trapped Trapped Charge in MOS Transistors,” IEEE Trans. Nucl. Sci. NS-36, 1946 (1989); J. H. Scofield, and D. M. Fleetwood, “Physical Basis for Nondestructive Tests of MOS Radiation Hardness,” NS-38, No. 6, (1991).
7. D. M. Fleetwood and J. H. Scofield, “Evidence that Similar Point Defects Cause 1/f Noise and Radiation-Induced-Hole Trapping in Metal-Oxide-Semiconductor Devices,” Phys. Rev. Lett. 64, 579 (1990).
8. H. E. Macs, S. H. Usmani, and G. Groeseneken, “Correlation Between 1/f Noise and Interface State Density at the Fermi Level in Field Effect Transistors,” J. Appl. Phys. 57, 4811 (1985).
9. C. Surya and T. Y. Hsiang, “Theory and Experiment on the 1/f Noise in P-channel MOSFETs at Low Drain Bias,” Phys. Rev. B 33, 4898 (1986).
10. D. H. Cobden, M. J. Uren, and M. J. Kirton, “Entropy Measurements on Slow Si/SiO2 Interface States,” Appl. Phys. Lett. 56, 1245 (1990).
11. P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process,” IEEE Trans. Nucl. Sci. NS-32, 3954 (1985).
12. P. J. McWhorter and P.S. Winokur, “Simple Thchnique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett. 48, 133 (1986).
13. G. Groeseneken, H. E. Mace, N. Beltran, and R. F. DeKeersmaecker, “A Reliable Approach to Charge-Pumping Measurements in MOS Transistors,” IEEE Trans. Electron Dev. ED-31, 42 (1984).
14. J. M. Benedetto and H. E. Boesch, Jr., “MOSFET and MOS Capacitor Responses to Ionizing Radiation,” IEEE Trans. Nucl. Sci. NS-31, 1461 (1984).
15. D. M. Fleetwood, “Dual-Transistor Method to Determine Threshold-Voltage Shifts Due to Oxide-Trapped Charge and Interface Traps in MOS Devices,” Appl. Phys. Lett. 55, 466 (1989).
16. D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur and F. W. Sexton, “Theory and Application of Dual-Transistor Transistor Charge Separation Analysis,” IEEE Trans. Nucl. Sci. NS-36, 1816 (1989).
17. For example, see S. M. Sze, Physics of Semiconductor Devices, 2nd Edition, John Wiley & Sons, New York, 1981, pp. 362–402.
18. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci. NS-31, 1434 (1984).
19. M. E. Zvanut, F. J. Feigl, W. B. Fowler, J. K. Rudra, P. J. Caplan, E. H. Poindexter, and J. D. Zook, “Rechargable E' Centers in Sputter-Deposited Silicon Dioxide Films,” Appl. Phys. Lett. 54, 2118 (1989).
20. W. B. Fowler, J. K. Rudra, M. E. Zvanut, and F. J. Feigl, “Hysteresis and Fanck-Condon Relaxation in Insulator-Snaiconductor tor Tunneling,” Phys. Rev. B 41, 8313 (1990).
21. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, “Defect Production in SiO2 by X-ray and Co-60 Radiations,” IEEE Trans. Nucl. Sci. NS-32, 4363 (1985)
22. A, J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, “The Nature of the Trapped Hole Annealing Process,” IEEE Trans. Nucl. Sci. NS-36, 1808 (1989).
23. D. M. Fleetwood, R A. Reber, Jr., and P. S. Winokur, “Effect of Bias on Thermally Stimulated Current (TSC) in Irradiated MOS Devices,” IEEE Trans. Nucl. Sci. NS-38, No. 6 (1991).