Novel shallow counter doping process and high performance buried channel pMOSFET using boron diffusion through oxide

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 111-112

  Toyoshima, Y ^a   Eguchi, T ^a   Hayashida, H ^a   Hashimoto, K ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS, ULSI--MANUFACTURE; SEMICONDUCTOR DEVICES, MOS; SEMICONDUCTOR MATERIALS--DOPING; SILICA;

BORON DIFFUSION; BURIED CHANNEL PMOS; COUNTER DOPING PROCESS; GATE POLYSILICON;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026370579     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)